Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. Developments of Plasma Etching Technology for Fabricating Semiconductor Devices
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1. Effect of Plasma Treatment on the Sensor Properties of a Light‐Addressable Potentiometric Sensor (LAPS);physica status solidi (a);2019-08-16
2. Crystallization and activation of silicon by microwave rapid annealing;Applied Physics A;2016-06-24
3. Decrease in Minority Carrier Lifetime of Crystalline Silicon Caused by Rapid Heating;MRS Proceedings;2012
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