Model parameter calibration method of SiC power MOSFETs behavioural model
Author:
Affiliation:
1. Department of Electrical EngineeringXi'an University of TechnologyPeople's Republic of China
2. Key Laboratory on Complex System Control and Intelligent Information ProcessingXi'an University of TechnologyPeople's Republic of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2019.0400
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1. An improved SiC-MOSFET model with focus on internal stray inductance and body diode stored charge for switching transients;2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe);2022-09-18
2. Modelling and solving of IGBT's transient analysis model based on the finite state machine;IET Power Electronics;2021-07-09
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