1. 2009 Proc. Int. Conf. & Exh. Power Electron. Intel. Motion Power Quality PCIM Europe 2009 Nuremberg Germany B. Sahan S.V. Araujo T. Kirstein L. Menezes P. Zacharias Photovoltaic converter topologies suitable for SiC‐JFETs 431 437
2. 2003 25th Int. Conf. Telecommunications Energy Yokohama Japan H. Ohashi Power electronics innovation with next generation advanced power devices 9 13
3. Evaluation of a SiC dc/dc converter for plug‐in hybrid‐electric‐vehicle at high inlet‐coolant temperature;Mazumder S.K.;IET Power Electron.,2011
4. 2011 Proc. 2011 – 14th Euro. Conf. Power Electron. and Appl. (EPE 2011) Birmingham UK S.V. Araujo P. Zacharias Perspectives of high‐voltage SiC‐semiconductors in high power conversion systems for wind and photovoltaic sources 1 10
5. Performance evaluation of high‐voltage 1.2 kV silicon carbide metal oxide semi‐conductor field effect transistors for three‐phase buck‐type PWM rectifiers in aircraft applications;Trentin A.;IET Power Electron.,2012