Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20081323?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
2. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
3. Room-Temperature Ultraviolet Nanowire Nanolasers
4. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
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