Monolithically integrated four-channel receiver array using diffused InGaAs JFET technology-Reference-Cited by-同舟云学术

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Monolithically integrated four-channel receiver array using diffused InGaAs JFET technology

Published:1991 Issue:18 Volume:27 Page:1632
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Mansfield C.,Newson D.J.,Birdsall P.,Quayle J.A.,Young R.,MacBean M.D.A.,Merrett R.P.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19911020?crawler=true&mimetype=application/pdf

Reference3 articles.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip;Applied Physics Letters;2004-09-13

2. Eight-channel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications;IEEE Photonics Technology Letters;1994-10

3. High-speed InP-InGaAs heterojunction phototransistors employing a nonalloyed electrode metal as a reflector;IEEE Journal of Quantum Electronics;1994

4. Selective-area epitaxy for GaAs-on-InP optoelectronic integrated circuits (OEICs);Semiconductor Science and Technology;1993-06-02

5. Comparison of InGaAs transistors as optoelectronic mixers;Electronics Letters;1993

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