Deep insight into linearity and NQS parameters of tunnel FET with emphasis on lateral straggle-Reference-Cited by-同舟云学术

Deep insight into linearity and NQS parameters of tunnel FET with emphasis on lateral straggle

Author:

Ghosh Sayani¹,Koley Kalyan²,Sarkar Chandan K.¹

Affiliation:

1. Nano Device Simulation LaboratoryElectronics and Telecommunication Engineering DepartmentJadavpur UniversityKolkata700 032India

2. Department of Electronics EngineeringIndian Institute of Technology DhanbadJharkhandDhanbad826 004India

Funder

Council for Scientific and Industrial Research, South Africa

Department of Science and Technology, Government of Kerala

All India Council for Technical Education

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

Reference30 articles.

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