Investigation of the I – V characteristics asymmetry in semiconducting Y–Ba–Cu

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Investigation of the I – V characteristics asymmetry in semiconducting Y–Ba–Cu–O diodes

Published:2017-11 Issue:11 Volume:12 Page:838-842
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Jukna Artūras¹²,Gradauskas Jonas¹³,Sužiedelis Algirdas¹³,Maneikis Andrius⁴,Šliužienė Kristina³,Sobolewski Roman²

Affiliation:

1. Department of PhysicsVilnius Gediminas Technical UniversityVilniusLT10223Lithuania

2. Department of Electrical and Computer Engineering and Laboratory for Laser EnergeticsUniversity of RochesterRochesterNY14627‐0231USA

3. Department of ElectronicsCentre for Physical Sciences and TechnologyVilniusLT10257Lithuania

4. Department of Material Science and Electrical EngineeringCentre for Physical Sciences and TechnologyVilniusLT10257Lithuania

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2017.0268

Reference25 articles.

1. Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics

2. On Estimating and Canceling Parasitic Capacitance in Submillimeter-Wave Planar Schottky Diodes

3. Giga- and terahertz frequency band detector based on an asymmetrically necked n-n+-GaAs planar structure

4. Impact of Eddy Currents and Crowding Effects on High-Frequency Losses in Planar Schottky Diodes

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