Optimization of surface passivation for suppressing leakage current in GaSb PIN devices-Reference-Cited by-同舟云学术

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Optimization of surface passivation for suppressing leakage current in GaSb PIN devices

Published:2020-11-03 Issue:25 Volume:56 Page:1420-1423
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Ji Y.¹,Azizur‐Rahman K. M.²,Chang T.³,Juang B.‐C.³,Prout D. L.⁴,Liang B.¹,Huffaker D. L.²,Chatziioannou A. F.⁴

Affiliation:

1. California NanoSystems InstituteUniversity of CaliforniaLos AngelesCalifornia90095USA

2. School of Physics and AstronomyCardiff UniversityCF24 3AAUnited Kingdom

3. Department of Electrical and Computer EngineeringUniversity of CaliforniaLos AngelesCalifornia90095USA

4. Department of Molecular and Medical PharmacologyUniversity of CaliforniaLos AngelesCalifornia90095USA

Funder

National Science Foundation

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2020.2063

Reference15 articles.

1. Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

2. Passivation of GaSb by sulfur treatment

3. Sulfide passivation of III–V semiconductors: Kinetics of the photoelectrochemical reaction

4. Sulfidization of GaAs in alcoholic solutions: a method having an impact on efficiency and stability of passivation

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