Low‐temperature‐grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation-Reference-Cited by-同舟云学术

Low‐temperature‐grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation

Published:2020-08 Issue:17 Volume:56 Page:897-899
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Tannoury C.¹,Billet M.¹,Coinon C.¹,Lampin J‐F.¹,Peytavit E.¹^ORCID

Affiliation:

1. Institute of Electronics, Microelectronics and Nanotechnology, UMR 8520 ‐ IEMN, University of Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts‐de‐FranceF‐59000LilleFrance

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2020.1116

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3. Coherent broadband continuous‐wave terahertz spectroscopy on solid‐state samples;Roggenbuck A.;New J. Phys.,2010

4. Highly efficient terahertz detection by optical mixing in a GaAs photoconductor;Peytavit E.;Appl. Phys. Lett.,2013

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