Optical gain of 1.3 µm GaAsSbN/GaAs quantum well lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
https://digital-library.theiet.org/content/journals/10.1049/iet-opt_20060058?crawler=true&mimetype=application/pdf
Reference28 articles.
1. Static and dynamic properties of InGaAsP-InP distributed feedback lasers-a detailed comparison between experiment and theory
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. GaInNAs/GaAs Multiple-Quantum-Well Grown by Metalorganic Chemical Vapor Deposition Using Nitrogen Carrier Gas
4. GaAsSb: A novel material for 1.3 [micro sign]m VCSELs
5. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
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