Lateral resurfed COMFET
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19840360?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Baliga, B.J.: ‘The insulated gate rectifier (IGR): a new power-switching device’, et al. IEDM Tech. Dig., 1982), p. 264
2. Goodman, A.M.: ‘Improved COMFET's with fast switching speed and high-current capability’, et al. IEDM Tech. Dig., 1983), p. 79
3. Chang, M.F.: ‘25 amp, 500 volt insulated gate transistors’, et al. IDEM Tech. Dig., 1983), p. 83
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