High voltage GaN p‐n diodes formed by selective area regrowth
Author:
Affiliation:
1. Sandia National LaboratoriesAlbuquerqueNM87185USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.3587
Reference13 articles.
1. An assessment of wide bandgap semiconductors for power devices;Hudgins J.L.;IEEE Trans. Power Electron.,2003
2. Near unity ideality factor and Shockley‐Read‐Hall lifetime in GaN‐on‐GaN p‐n diodes with avalanche breakdown;Hu Z.;Appl. Phys. Lett.,2015
3. High voltage and high current density vertical GaN power diodes
4. 5.0 kV breakdown-voltage vertical GaN p–n junction diodes
5. 3.7 kV Vertical GaN PN Diodes
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