High power operation of GaInAsP/GaInAs MQW ridge lasers emitting at 1.48 μm-Reference-Cited by-同舟云学术

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High power operation of GaInAsP/GaInAs MQW ridge lasers emitting at 1.48 μm

Published:1990 Issue:21 Volume:26 Page:1755
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Bhumbra B.S.,Glew R.W.,Greene P.D.,Henshall G.D.,Lowney C.M.,Whiteaway J.E.A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19901127?crawler=true&mimetype=application/pdf

Reference4 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detailed large-signal dynamic modelling of DFB laser structures and comparison with experiment;Optical and Quantum Electronics;1994-07

2. Thermal impedance measurement of semiconductor lasers;Electronics Letters;1994-05-12

3. Quantum Well Heterostructure Lasers;VLSI Electronics Microstructure Science;1994

4. High‐power, single‐frequency operation of an InGaAsP/InGaAs active‐grating surface emitting amplifier at λ=1.7 μm;Applied Physics Letters;1993-04-26

5. Demonstration of an InGaAsP/InGaAs multiquantum well active-grating surface-emitting amplifier;IEEE Photonics Technology Letters;1992-09

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