High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar transistors

Published:1989 Issue:17 Volume:25 Page:1124
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Enquist P.M.,Hutch By J.A.,Chang M.F.,Asbeck P.M.,Sheng N.H.,Higgins J.A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19890755?crawler=true&mimetype=application/pdf

Reference4 articles.

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transistors;Technology of Quantum Devices;2009-11-15

2. Pulsed Semiconductor Lasers;Femtosecond Laser Pulses;1998

3. GaAs-Based and InP-Based Heterostructure Bipolar Transistors;Semiconductors and Semimetals;1994

4. Performance capabilities of HBT devices and circuits for satellite communication;IEEE Transactions on Microwave Theory and Techniques;1992-06

5. Heavily Zn-doped graded-base AlGaAs/GaAs HBTs grown by MOCVD;IEEE Transactions on Electron Devices;1991-06

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