Fabrication of 3-terminal transferred-electron logic devices by proton bombardment for device isolation-Reference-Cited by-同舟云学术

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Fabrication of 3-terminal transferred-electron logic devices by proton bombardment for device isolation

Published:1975 Issue:10 Volume:11 Page:201
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Upadhyayula L.C.,Narayan S.Y.,Douglas E.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19750153?crawler=true&mimetype=application/pdf

Reference8 articles.

1. CAULTON, M.: Private communication.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

2. Current-voltage characteristics of proton-bombarded AuGaAs contacts;Solid-State Electronics;1986-08

3. The electrical characteristics of ion implanted compound semiconductors;Nuclear Instruments and Methods;1981-04

4. Gigabit electronics—A review;Proceedings of the IEEE;1979

5. Literatur;Ionenimplantation;1978

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