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Reliability of 50 nm low-noise metamorphic HEMTs and LNAs

  • Published:2005 Issue:12 Volume:41 Page:699
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. Lett.

Author:

Dammann M.,Leuther A.,Tessmann A.,Massler H.,Mikulla M.,Weimann G.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23

2. Metamorphic HEMT technology for submillimeter-wave MMIC applications;2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM);2010-05

3. Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-03

4. Performance of a GaAs-Based Pseudomorphic Transistor with the Electroless-Plated Surface Treated Gate;Journal of The Electrochemical Society;2010

5. Characteristics of an electroless plated-gate transistor;Applied Physics Letters;2009-08-03
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