Suitability of present silicon bipolar IC technologies for optical fibre transmission rates around and above 10 Gbit/s-Reference-Cited by-同舟云学术

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Suitability of present silicon bipolar IC technologies for optical fibre transmission rates around and above 10 Gbit/s

Published:1990 Issue:4 Volume:137 Page:251
ISSN:0956-3768
Container-title:IEE Proceedings G Circuits, Devices and Systems
language:en
Short-container-title:IEE Proc. F Radar Signal Process. UK

Author:

Rein H.-M.,Hauenschild J.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-g-2.1990.0039?crawler=true&mimetype=application/pdf

Reference37 articles.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Very-high-speed Si bipolar static frequency dividers with new T-type flip-flops;IEEE Journal of Solid-State Circuits;1995

2. High-bit-rate, high-input-sensitivity decision circuit using Si bipolar technology;IEEE Journal of Solid-State Circuits;1994-05

3. Over 10 Gb/s regenerators using monolithic ICs for lightwave communication systems;IEEE Journal on Selected Areas in Communications;1991-06

4. 23 Gbit/s, Si bipolar decision circuit consisting of 24 Gbit/s MUX and DEMUX ICs;Electronics Letters;1991-05-23

5. A silicon bipolar decision circuit operating up to 15 Gb/s;IEEE Journal of Solid-State Circuits;1991

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