High-power, highly reliable 1.05 m InGaAs strained quantum well laser diodes as pump sources for thulium-doped fibre amplifiers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020021?crawler=true&mimetype=application/pdf
Reference12 articles.
1. Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Measurements of gain cross-saturation and transient response in highly doped TDFAs;Optics Communications;2005-02
2. High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes;IEEE Journal of Quantum Electronics;2003-12
3. 1070nm and 1118nm high power lasers grown with partial strain balancing;Journal of Crystal Growth;2003-02
4. High-power highly reliable 1.06 [micro sign]m InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers;Electronics Letters;2003
5. 350 mW reliable operation in fundamental transverse-mode InGaAs (=1.05 [micro sign]m)∕ GaAsP strain-compensated laser diodes;Electronics Letters;2003
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