Performance comparison analysis of GeSi and Si bipolar transistors-Reference-Cited by-同舟云学术

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Performance comparison analysis of GeSi and Si bipolar transistors

Published:1996 Issue:13 Volume:32 Page:1239
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Neugroschel A.,Sah C.-T.,Ford J.M.,Steele J.,Tang R.,Stein C.,Welch P.,Watanabe J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19960781?crawler=true&mimetype=application/pdf

Reference11 articles.

1. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

2. Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

3. High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurement and simulation of boron diffusion in strained Si1−xGex epitaxial layers with a linearly graded germanium profile;Solid-State Electronics;2001-11

2. Low frequency conductance voltage analysis of Si/Ge/sub x/Si/sub 1-x//Si heterojunction bipolar transistors;IEEE Transactions on Electron Devices;2000

3. Quantitative analysis of Si/GexSi1–x/Si heterojunction bipolar transistors with linearly graded Ge profile;Electronics Letters;1999

4. Measurement of built-in electric field in base of Si/GexSi1–x/Si HBT with linearly-graded Ge profile;Electronics Letters;1996

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