InGaP∕InGaAs∕GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20031016?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Pseudo-complementary FET logic (PCFL): a low-power logic family in GaAs
2. p-channel quantum-well heterostructure MI/sup 3/SFET
3. 0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency
4. Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET
5. Improved breakdown in LP-MOCVD grown n+-GaAs/(P+)-GaInP/n-GaAs heterojunction camel-gate FET
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1. Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors;Semiconductors;2014-08-31
2. On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET);Solid-State Electronics;2013-01
3. p-type Channel Field-Effect Transistors;Fundamentals of III-V Semiconductor MOSFETs;2010
4. Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits;Journal of Crystal Growth;2009-12
5. Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors;MRS Bulletin;2009-07
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