Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor-Reference-Cited by-同舟云学术

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Analytical modelling of dielectric engineered strained dual‐material double‐gate‐tunnelling field effect transistor

Published:2019-10 Issue:7 Volume:13 Page:1039-1048
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Kumar Dash Dinesh¹^ORCID,Saha Priyanka¹,Kumar Sarkar Subir¹

Affiliation:

1. Department of Electronics & Telecommunication EngineeringJadavpur University188 Raja S. C. Mallick RoadKolkata700032India

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2018.5293

Reference24 articles.

1. Switching performance analyses of gate material and gate dielectric engineered TFET architectures and impact of interface oxide charges

2. Doping-Less Tunnel Field Effect Transistor: Design and Investigation

3. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

4. Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

5. Work Function Engineering With Linearly Graded Binary Metal Alloy Gate Electrode for Short-Channel SOI MOSFET

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