Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET-Reference-Cited by-同舟云学术

Analytical modelling and performance analysis of gate‐ and channel‐engineered trapezoidal trigate MOSFET

Published:2019-11 Issue:8 Volume:13 Page:1107-1116
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Tahir Shora Aadil¹^ORCID,Khanday Farooq A.¹^ORCID

Affiliation:

1. Department of Electronics and Instrumentation TechnologyUniversity of Kashmir, HazratbalSrinagarIndia

Funder

Ministry of Electronics and Information technology

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2018.5302

Reference29 articles.

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4. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

5. ‘Emerging Research Devices International technology roadmap for semiconductors’ https://www.semiconductors.org/resources/2013‐international‐technology‐roadmap‐for‐semiconductors‐itrs/ accessed October 2018

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