3-level conduction-band structure of GaAs from high-stress and high-field measurements-Reference-Cited by-同舟云学术

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3-level conduction-band structure of GaAs from high-stress and high-field measurements

Published:1977 Issue:2 Volume:13 Page:46
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Adams A.R.,Vinson P.J.,Pickering C.,Pitt G.D.,Fawcett W.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19770033?crawler=true&mimetype=application/pdf

Reference15 articles.

1. Pickering, C.: ‘The pressure dependence of transferred electron effects in GaAs, InP and InAs’, March, 1976, Ph.D. thesis, University of Surrey

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