High power 630 nm band laser diodes with strain-compensated single quantum well active layer
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970721?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High power, low threshold, singlemode 630 nm laser diodes
2. High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier
3. Strain-compensated multiple quantum well 630-nm-band AlGaInP laser diodes
4. AlGaInP visible laser diodes grown on misoriented substrates
5. Fundamental transverse mode 100-mW semiconductor laser with high reliability
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3. Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes;Japanese Journal of Applied Physics;2006-10-06
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