40 Gbit/s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20070344?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High-Speed Avalanche Photodiode with a Neutral Absorption Layer for 1.55 µm Wavelength
2. High-Speed Response of Uni-Traveling-Carrier Photodiodes
3. InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 [micro sign]m for high-speed and low-voltage-operation optical receiver
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1. High Responsivity and Reliability of InP-Based Waveguide Avalanche Photodiodes with Butt-Joint Coupled Structure;Journal of Lightwave Technology;2023
2. A High-Speed Grating-Assistant SOA-PIN Photodetector With High Sensitivity;Journal of Lightwave Technology;2022-07-15
3. 106-Gb/s Waveguide AlInAs/GaInAs Avalanche Photodiode with Butt-joint Coupling Structure;Optical Fiber Communication Conference (OFC) 2022;2022
4. Optimization of charge and multiplication layers of 20‐Gbps InGaAs/InAlAs avalanche photodiode;ETRI Journal;2021-10
5. High-speed III-V based avalanche photodiodes for optical communications—the forefront and expanding applications;Applied Physics Letters;2020-04-06
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