Switching properties of inversion-controlled metal-thin insulator -Si(n)-Si(p+) devices-Reference-Cited by-同舟云学术

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Switching properties of inversion-controlled metal-thin insulator -Si(n)-Si(p+) devices

Published:1981 Issue:2 Volume:128 Page:53
ISSN:0143-7100
Container-title:IEE Proceedings I Solid State and Electron Devices
language:en
Short-container-title:IEE Proc. I Solid State Electron. Devices UK

Author:

Sarrabayrouse G.,Buxo J.,Sebaa J.-P.,Essaid A.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-i-1.1981.0019?crawler=true&mimetype=application/pdf

Reference14 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A thyristor model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: The influence of insulating layer and illumination;Journal of Applied Physics;1990-12-15

2. A phenomenological model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: A development of the analogy with the thyristor;Journal of Applied Physics;1989-03

3. A survey of new bipolar amplifying and negative-resistance devices;Solid-State Electronics;1985-06

4. The MISS device modelling and influence of critical parameters;physica status solidi (a);1985-02-16

5. Homogénéité d'épaisseur et propriétés électriques des couches minces de silice obtenues dans un mélange N2/O2/HCl;Revue de Physique Appliquée;1985

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