Optimal design of P-buffer layer for GaAs power MESFET
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19961509?crawler=true&mimetype=application/pdf
Reference2 articles.
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. AlGaAs buffer structure grown by metalorganic vapor phase epitaxy for GaAs-based field-effect transistors;Solid-State Electronics;2006-02
2. Analysis of DC Characteristics and Small Signal Equivalent Circuit Parameters of GaAs Metal–Semiconductor Field Effect Transistors with Different Gate Lengths and Different Gate Contours by Two-Dimensional Device Simulations;Japanese Journal of Applied Physics;2005-09-08
3. Ion-implanted planar-gate GaAs MESFET optimized for single-voltage-supply operation;Microwave and Optical Technology Letters;2001
4. AlGaAs/InGaAs Pseudomorphic Doped Channel Field Effect Transistor with A P-AlAs Buffer Layer Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2000-05-15
5. Low Doped P-Type AlGaAs Buffer Layers Grown by Metalorganic Chemical Vapor Deposition Using Intrinsic Carbon Doping Method;Japanese Journal of Applied Physics;1998-04-01
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