Measurement of built-in electric field in base of Si/GexSi1–x/Si HBT with linearly-graded Ge profile
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19961528?crawler=true&mimetype=application/pdf
Reference15 articles.
1. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
2. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
3. Heterojunction bipolar transistors using Si-Ge alloys
4. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
5. Performance comparison analysis of GeSi and Si bipolar transistors
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4. Measurement and simulation of boron diffusion in strained Si/sub 1-x/Ge/sub x/ epitaxial layers;IEEE Transactions on Electron Devices;2001
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