Low-threshold 1.3 μm GaInAsP/InP lasers grown by atmospheric-pressure MOVPE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19850368?crawler=true&mimetype=application/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural and optical properties of GaAlInAs lattice matched to InP grown by low‐pressure metalorganic vapor phase epitaxy;Applied Physics Letters;1988-07-25
2. GaAlInAs ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPE;Journal of Crystal Growth;1988
3. AlGaInAs/InP double heterostructure lasers grown by low-pressure metal organic vapour-phase epitaxy for emission at 1300 nm;Electronics Letters;1988
4. Influence of alkyl substituents of Oms and operating pressure on the quality of InxGa1−xAs/InP heterostructures grown by OMVPE;Journal of Crystal Growth;1986-09
5. Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructures;Journal of Crystal Growth;1986-09
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