Fundamental characteristics of an InGaAsP/InP laser transistor
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19850068?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modulation Characteristics of High-Speed Transistor Lasers;Applied Sciences;2022-04-28
2. Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C;Japanese Journal of Applied Physics;2020-04-01
3. Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate;Japanese Journal of Applied Physics;2017-12-14
4. Improvement in the current-gain of a 1.3-µm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer;Japanese Journal of Applied Physics;2016-06-01
5. Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions;IEICE Electronics Express;2014
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