Evolution of nanomicro structures on GaAs (001) surface under high temperature evaporation-Reference-Cited by-同舟云学术

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Evolution of nanomicro structures on GaAs (001) surface under high temperature evaporation

Published:2014-11 Issue:11 Volume:9 Page:800-803
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Li Yulan¹,Hu Kai²,Qu Yindong¹,Li Xiaolong¹,Xu Xingliang¹,Gao Lei¹,Medvids A.³,Wang Zhiming M.¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054People's Republic of China

2. Yingcai Experimental SchoolUniversity of Electronic Science and Technology of ChinaChengdu610054People's Republic of China

3. Laboratory of Semiconductor PhysicsRiga Technical University10048RigaLatvia

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2014.0350

Reference26 articles.

1. Ordering of the Nanoscale Step Morphology As a Mechanism for Droplet Self-Propulsion

2. Running Droplets of Gallium from Evaporation of Gallium Arsenide

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time evolution of GaAs(111) surface morphology and desorption rate during Langmuir evaporation: Monte Carlo simulation;Materials Science in Semiconductor Processing;2021-11

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