Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors-Reference-Cited by-同舟云学术

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Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors

Published:1976 Issue:2 Volume:12 Page:42
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Sodini D.,Touboul A.,Lecoy G.,Savelli M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19760033?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Lincoln Laboratory MIT, 1955

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1. Noise spectroscopy of molecular electronic junctions;Applied Physics Reviews;2021-03

2. Correlation of a generation-recombination center with a deep level trap in GaN;Applied Physics Letters;2015-03-09

3. Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors;Nano Letters;2013-08-19

4. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors;Solid-State Electronics;2003-06

5. Generation-recombination noise in GaN and GaN-based devices;SPIE Proceedings;2003-05-12

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