Oxygen pressure control during the sputtering deposition of channel for flexible thin‐film transistors with low‐temperature process compatibility-Reference-Cited by-同舟云学术

Oxygen pressure control during the sputtering deposition of channel for flexible thin‐film transistors with low‐temperature process compatibility

Published:2016-05 Issue:10 Volume:52 Page:853-855
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Park M.J.¹,Lee W.H.¹,Kim K.A.¹,Yun D.J.¹,Yoon S.M.¹

Affiliation:

1. Department of Advanced Materials Engineering for Information & ElectronicsKyung Hee UniversityYonginGyeonggi‐do446Republic of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.0339

Reference8 articles.

1. Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates

2. Device characteristics comparisons for the InGaZnO thin film transistors fabricated on two‐type surfaces of the plastic poly(ethylene naphthalate) substrates with hybrid barrier layers;Park M.J.;J. Vac. Sci. Technol. B,2015

3. Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

4. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

5. Enhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas process

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