DC–X‐band high‐power SOI CMOS T/R switch-Reference-Cited by-同舟云学术

DC–X‐band high‐power SOI CMOS T/R switch

Published:2016-05 Issue:11 Volume:52 Page:937-939
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Suh B.¹,Min B.‐W.¹

Affiliation:

1. School of Electrical and Electronic EngineeringYonsei UniversitySeoul120‐749Republic of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.0179

Reference12 articles.

1. High‐power monolithic AlGaN/GaN HEMT switch for X‐band applications;Ciccognani W.;Electron. Lett.,2008

2. X‐band high‐power HEMT SPDT switch with selectively anodised aluminium substrate;Yeo S.K.;Electron. Lett.,2010

3. CMOS SPDT T/R switch for X-band, on-chip radar applications

4. $Ka$-Band Low-Loss and High-Isolation Switch Design in 0.13-$\mu{\hbox {m}}$ CMOS

5. A 31.3 dBm bulk CMOS T/R switch using stacked transistors with sub‐design‐rule channel length in floated p‐wells;Xu H.;IEEE J. Solid‐State Circuits,2007

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