RF power limiter using capacitively-coupled contacts III-nitride varactor
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2012.3428?crawler=true&mimetype=application/pdf
Reference7 articles.
1. NOVEL APPROACHES TO MICROWAVE SWITCHING DEVICES USING NITRIDE TECHNOLOGY
2. Low-loss AlInN/GaN microwave switch
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4. Simin, G., Shur, M., and Gaska, R.: ‘Semiconductor Device and Circuit Having Multiple Voltage Controlled Capacitors’, (US Patent US7547939 B2)
5. Current Crowding in High Performance Low-Loss HFET RF Switches
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