GaInNAs-based distributed feedback laser diodes emitting at 1.5 [micro sign]m
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20040279?crawler=true&mimetype=application/pdf
Reference11 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 1.42 [micro sign]m continuous-wave operation of GaInNAs laser diodes
3. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
4. Towards high performance GaInAsN∕GaAsN laser diodes in 1.5 μm range
5. Low-threshold CW GaInNAsSb∕GaAs laser at 1.49 [micro sign]m
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1. Material Gain in Ga0.66In0.34NyAs1–y, GaNyAs0.69–ySb0.31, and GaNyP0.46Sb0.54–yQuantum Wells Grown on GaAs Substrates: Comparative Theoretical Studies;IEEE Journal of Quantum Electronics;2014-12
2. Correlation between the optical quality and the Fermi level position in GaInNAs alloys;Journal of Physics D: Applied Physics;2008-11-27
3. Study of local segregation in GaInNAs using EXAFS measurements;Journal of Physics and Chemistry of Solids;2008-02
4. Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 [micro sign]m;Electronics Letters;2008
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