Achieving reproducibility needed for manufacturing semiconductor tunnel devices
Author:
Affiliation:
1. Electrical Engineering DivisionDepartment of EngineeringUniversity of CambridgeCambridgeCB3 0FAUnited Kingdom
2. School of Electrical and Electronic EngineeringThe University of ManchesterSackville StreetManchesterM60 1QDUnited Kingdom
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.0782
Reference9 articles.
1. A tunnel diode with asymmetric spacer layers for use as a microwave detector;Syme R.T.;Electron. Lett.,1991
2. Phonon and polaron interaction in germanium‐gallium arsenide tunnel heterojunctions;Nathan M.I.;Phys. Rev.,1962
3. Microwave detection using GaAs/AlAs tunnel structures;Syme R.T.;GEC J. Res.,1999
4. The unacceptable variability in tunnel currents for proposed electronic device applications
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