Improved AlGaAs/InGaAs HFETs due to double doped-channel design
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990278?crawler=true&mimetype=application/pdf
Reference6 articles.
1. A high-current drivability i-AlGaAs/n-GaAs doped-channel MIS-Like FET (DMT)
2. An investigation of i-AlGaAs/n-GaAs doped-channel MIS-like FET's (DMT's)—Properties and performance potentialities
3. Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0≤x≤0.25) doped-channel field-effect transistors (DCFET's)
4. Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructures
5. High-speed and large noise margin tolerance E/D logic gates with LDD structure DMTs fabricated using selective RIE technology
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Device linearity comparison of uniformly doped and /spl delta/-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.6/Ga/sub 0.4/As metamorphic HEMTs;IEEE Electron Device Letters;2006-07
2. Characteristics of InGaP/GaAs co-integrated δ-doped heterojunction bipolar transistor and doped-channel field effect transistor;Solid-State Electronics;2002-01
3. Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure;Solid-State Electronics;2001-12
4. Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/InxGa1-xAs/GaAs Pseudomorphic Transistors;Japanese Journal of Applied Physics;1999-12-01
5. Integrated fabrication of InGaP/GaAs δ-doped heterojunction bipolar transistor and doped-channel field effect transistor;2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)
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