InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions-Reference-Cited by-同舟云学术

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InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

Published:1993-05-13 Issue:10 Volume:29 Page:850-851
ISSN:1350-911X
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Gee R.C.,Asbeck P.M.,Lin C.L.,Kirchner P.D.,Woodall J.M.,Farley C.W.,Seabury C.W.,Higgins J.A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19930568?crawler=true&mimetype=application/pdf

Reference9 articles.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Improved InP-based double heterojunction bipolar transistors;physica status solidi (c);2007-04

3. Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor;Applied Physics Letters;2003-12-29

4. Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures;Journal of Crystal Growth;2003-05

5. Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs;Journal of Crystal Growth;2000-02

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