Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology-Reference-Cited by-同舟云学术

Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

Published:2021-02-23 Issue:6 Volume:57 Page:264-266
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Ma Rui¹^ORCID,Sidi El Valli Ahmed²,Kreißig Martin¹,Di Pendina Gregory²,Protze Florian¹^ORCID,Ebels Ursula²,Prenat Guillaume²,Chavent Antoine²,Iurchuk Vadym²,Sousa Ricardo²,Vila Laurent²,Ellinger Frank¹,Langer Jürgen³,Wrona Jerzy³,Prejbeanu Ioan‐Lucian²

Affiliation:

1. Chair for Circuit Design and Network Theory Technical University of Dresden Dresden Germany

2. Univ. Grenoble Alpes CEA GNRS Spintec Grenoble France

3. Singulus Technologies AG Kahl am Main Germany

Funder

H2020 European Institute of Innovation and Technology

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12103