AlGaAs/GaAs tunnelling diode integrated with nanometre-scale oxides patterned by atomic force microscope
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980865?crawler=true&mimetype=application/pdf
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1. Modification of hydrogen‐passivated silicon by a scanning tunneling microscope operating in air
2. Fabrication of 0.1 μm metal oxide semiconductor field‐effect transistors with the atomic force microscope
3. Fabrication of nanometer‐scale side‐gated silicon field effect transistors with an atomic force microscope
4. Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system
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