EEPROM transistor fabricated with stacked SiOx LPCVD films
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980939?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Charge transport and trapping phenomena in off‐stoichiometric silicon dioxide films
2. Preparation and Some Properties of Chemically Vapor‐Deposited Si‐Rich SiO2 and Si3 N 4 Films
3. Enhanced tunneling characteristics of PECVD silicon-rich-oxide (SRO) for the application in low voltage flash EEPROM
4. Erase/write cycle tests of n-MOSFETs with Si-implanted gate-SiO/sub 2/
5. Optical properties of non-stoichiometric SiO2 as a function of excess silicon content and thermal treatments
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1. Extraction of optical properties and thickness of silicon-rich oxide films from ellipsometry measurement;SPIE Proceedings;2012-10-10
2. Optical and electrical properties of silicon rich oxide films for optical sensors;Sensors and Actuators A: Physical;2006-11
3. Study of the conduction properties of silicon-rich oxide under illumination;Thin Solid Films;2005-02
4. New experimental observations of single electron trapping properties of Si nanoclusters in SRO obtained by LPCVD;Materials Science in Semiconductor Processing;2004-02
5. Single electron charging in Si nanocrystals embedded in silicon-rich oxide;Nanotechnology;2003-08-01
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