Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010298?crawler=true&mimetype=application/pdf
Reference6 articles.
1. High-resolution x-ray diffraction investigations of He-implanted GaAs
2. AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition
3. Atomic layer epitaxy for the growth of heterostructure devices
4. Optimised proton implantation step for vertical-cavity surface-emitting lasers
5. Ziegler, J.F., Biersack, J.P., and Littmark, U.: ‘The stopping and range of ions in solids’, (Pergamon Press New York 1985)
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