Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors

Published:2001 Issue:18 Volume:37 Page:1140
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Ma Z.,Mohammadi S.,Bhattacharya P.,Katehi L.P.B.,Alterovitz S.A.,Ponchak G.E.,Strohm K.M.,Luy J.-F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20010770?crawler=true&mimetype=application/pdf

Reference5 articles.

1. Coplanar Ka-band SiGe-MMIC amplifier

2. X- and Ku-band amplifiers based on Si/SiGe HBT's and micromachined lumped components

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs;IEEE Transactions on Nuclear Science;2006-08

2. Ultrahigh-performance 8-GHz SiGe power HBT;IEEE Electron Device Letters;2006-05

3. On The Operation Configuration of SiGe HBTs Based on Power Gain Analysis;IEEE Transactions on Electron Devices;2005-02

4. 3-W SiGe power HBTs for wireless applications;Materials Science in Semiconductor Processing;2005-02

5. An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors;IEEE Transactions on Microwave Theory and Techniques;2003-12

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