2 W reliable operation in 50 [micro sign]m-wide InGaAsP/InGaP/AlGaAs ( = 810 nm) SQW diode lasers with tensile-strained InGaP barriers-Reference-Cited by-同舟云学术

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2 W reliable operation in 50 [micro sign]m-wide InGaAsP/InGaP/AlGaAs ( = 810 nm) SQW diode lasers with tensile-strained InGaP barriers

Published:2001 Issue:21 Volume:37 Page:1289
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Yamanaka F.,Wada M.,Kuniyasu T.,Ohgoh T.,Fukunaga T.,Hayakawa T.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20010869?crawler=true&mimetype=application/pdf

Reference5 articles.

1. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

2. Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs $\bf 0.8 {\mbi \mu } m$ Separate Confinement Heterostructure Lasers

3. High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

4. Effects of broad-waveguide structure in 0.8 μm high-power InGaAsP/InGaP/AlGaAs lasers

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1. Dependence of the up-conversion emission of Li+ co-doped Y2O3:Er3+ films with dopant concentration;Journal of Luminescence;2015-11

2. High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement;Semiconductors;2009-04

3. Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality;Semiconductor Science and Technology;2007-03-09

4. Diode-pumped passively mode-locked Nd:YVO/sub 4/ lasers with 40-GHz repetition rate;IEEE Journal of Quantum Electronics;2005-01

5. Compact 10-GHz Nd:GdVO_4 laser with 05-W average output power and low timing jitter;Optics Letters;2004-11-15

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