Inductively coupled CH 4 /H 2 plasma etching process for mesa delineation of InAs/GaSb type‐II superlattice pixels-Reference-Cited by-同舟云学术

Inductively coupled CH 4 /H 2 plasma etching process for mesa delineation of InAs/GaSb type‐II superlattice pixels

Published:2019-06 Issue:7 Volume:14 Page:753-756
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Das Sona¹,Das Utpal²

Affiliation:

1. Department of Electronics and Communication EngineeringK.L UniversityGreenfieldsVaddeswaramAPIndia

2. Department of Electrical EngineeringIndian Institute of Technology KanpurKanpur208016India

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5549

Reference19 articles.

1. InAs/GaSb type-II superlattice infrared detectors: Future prospect

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3. TanS.L.GohY.L.DasD.S.et al.: ‘Dry etching and surface passivation techniques for type‐II InAs/GaSb superlattice infrared detectors’.Proc. SPIE Toulouse France 2010 vol. 7838 pp.783814‐1–783814‐8

4. Process development of methane–hydrogen–argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls

5. BiY.GaillardonP.HuX.S.et al.: ‘Leveraging emerging technology for hardware security ‐ case study on silicon nanowire FETs and graphene SymFETs’.IEEE 23rd Asian Test Symp. Hangzhou China 2014 pp.342–347

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