Reliability improvements in SOI‐like MOSFET with ESD and self‐heating effect-Reference-Cited by-同舟云学术

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Reliability improvements in SOI‐like MOSFET with ESD and self‐heating effect

Published:2018-12 Issue:12 Volume:13 Page:1649-1652
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Cao Fei¹,Shan Chan²,Wang Ying¹,Luo Xin²,Yu Cheng‐hao¹

Affiliation:

1. Key Laboratory of RF Circuits and SystemsMinistry of EducationHangzhou Dianzi UniversityHangzhou310018People's Republic of China

2. College of Information and Communication EngineeringHarbin Engineering UniversityHarbin150001People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5124

Reference18 articles.

1. An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic Bipolar

2. Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide

3. Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

4. Z2-FET: A promising FDSOI device for ESD protection

5. ESD Protection for SOI Technology Using Under-the-BOX (Substrate) Diode Structure

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robustness-Improved ESD Protection Devices With Low Leakage Using Middle Silicon Layer in Double SOI Technology;IEEE Transactions on Electron Devices;2024-06

2. Performance Analysis and Read Voltage Optimization of E-Beam Evaporated Amorphous SnO₂-Based Cross-Cell Resistive Switching Device;IEEE Transactions on Electron Devices;2023-12

3. A Simulation Study of Bipolar I-MOS for ESD Protection;IEEE Transactions on Electron Devices;2023-12

4. Gate Grounded Trench I-MOS as an ESD Clamp for Sub-2V Applications;IEEE Access;2023

5. A New Technique for Improving Kink Effect in High-Voltage LDMOS Transistors: M-shape Drift Region;Silicon;2021-10-26

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