Hetero‐material CPTFET with high‐frequency and linearity analysis for ultra‐low power applications-Reference-Cited by-同舟云学术

Hetero‐material CPTFET with high‐frequency and linearity analysis for ultra‐low power applications

Published:2018-11 Issue:11 Volume:13 Page:1609-1614
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Yadav Dharmendra Singh¹,Sharma Dheeraj¹,Tirkey Sukeshni¹,Sharma Deepak Ganesh¹,Bajpai Shriya¹,Soni Deepak¹,Yadav Shivendra¹,Aslam Mohd.¹,Sharma Neeraj²

Affiliation:

1. Electronics and Communication Engineering DisciplinePDPM‐Indian Institute of Information Technology, Design and ManufacturingJabalpur482005Madhya PradeshIndia

2. Department of Computer Science EngineeringRamrao Adik Institute of TechnologyNerulNavi, MumbaiIndia

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5075

Reference21 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. HaronN.Z.HamdiouiS.: ‘Why is CMOS scaling coming to an END?’.2008 3rd Int. Design and Test Workshop (IDT 2008) December2008 vol. 98 no. 103 pp.20–22

3. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

4. Doping-Less Tunnel Field Effect Transistor: Design and Investigation

5. FinFETs and Other Multi-Gate Transistors

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