Band offsets of In0.30Ga0.70As/In0.29Al0.71As heterojunction grown on GaAs substrate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941445?crawler=true&mimetype=application/pdf
Reference17 articles.
1. Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs
2. Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x‐ray photoemission spectroscopy
3. Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0=
4. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
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3. Band offsets of Al[sub x]Ga[sub 1−x]SbAs/InGaAs heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1−xP graded buffer layers;Materials Science in Semiconductor Processing;2001-12
5. Metamorphic In[sub 0.52]Al[sub 0.48]As/In[sub 0.53]Ga[sub 0.47]As high electron mobility transistors on GaAs with In[sub x]Ga[sub 1−x]P graded buffer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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