Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiquantum well structures
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941086?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Multiple quantum well (MQW) waveguide modulators
2. Quantum well intermixing
3. Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering
4. On the Formation of Planar‐Etched Facets in GaInAsP / InP Double Heterostructures
5. Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz
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1. New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator;Optoelectronic Materials and Devices II;2000-07-11
2. Gratinglike modulation of GaAs/AlGaAs quantum well intermixing fabricated with laser interference;Applied Physics Letters;1998-06
3. Quantum well intermixing in material systems for 1.5 μm (invited);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-03
4. Interdiffusion induced modification of surface-acoustic-wave AlGaAs-GaAs quantum-well modulators;IEEE Journal of Selected Topics in Quantum Electronics;1998
5. Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation;IEEE Photonics Technology Letters;1997-05
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